smd type 1.27 +0.1 -0.1 1.27 +0.1 -0.1 1.27 +0.1 -0.1 5.08 +0.1 -0.1 5.60 0.1max 8.7 +0.2 -0.2 5.28 +0.2 -0.2 2.54 +0.2 -0.2 2.54 15.25 +0.2 -0.2 4.57 +0.2 -0.2 0.4 +0.2 -0.2 2.54 +0.2 -0.2 0.81 +0.1 -0.1 to - 263 unit: mm 1gate 2drain 3 source 2SK3467 features 4.5 v drive available low on-state resistance r ds(on)1 =6.0m max. (v gs =10v,i d =40a) low gate charge q g = 55 nc typ. (i d =80a,v dd =16v,v gs =10v) built-in gate protection diode surface mount device available absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 20 v gate to source voltage v gss 20 v i d 80 a i dp * 320 a power dissipation t c =25 76 t a =25 1.5 channel temperature t ch 150 storage temperature t stg -55to+150 *pw 10 s,duty cycle 1% drain current p d w electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain cut-off current i dss v ds =20v,v gs =0 10 a gate leakage current i gss v gs = 20v,v ds =0 10 a gat cutoff voltage v gs(off) v ds =10v,i d =1ma 1.5 2.5 v forward transfer admittance y fs v ds =10v,i d =40a 20 s r ds(on)1 v gs =10v,i d =40a 4.8 6.0 m r ds(on)2 v gs =4.5v,i d =40a 6.7 9.5 m input capacitance c iss 2800 pf output capacitance c oss 1200 pf reverse transfer capacitance c rss 600 pf turn-on delay time t on 16 ns rise time t r 23 ns turn-off delay time t off 74 ns fall time tf 31 ns total gate charge q g 55 nc gate to source charge q gs 9nc gate to drain charge q gd 17 nc v ds =10v,v gs =0,f=1mhz i d =40a,v gs(on) =10v,r g =10 ,v dd =10v i d =80a, v dd =16v, v gs =10v draintosourceon-stateresistance product specification 4008-318-123 sales@twtysemi.com 1 of 1 http://www.twtysemi.com
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